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The study of the behaviour of the cell of emerging memories (such as PCMs and ReRAMs) is fundamental to optimize materials, cell architecture, and programming pulses and algorithms as well as to monitor the actual cell performance. Since the final state of the above memory cells is dependent on the applied programming pulse shape, a buffer able to feed the cell with adequate electrical pulses is needed...
Through the last decade of the past century and the 1st decade of our present century, Moore's law, the observation that was made some 20 years prior, was convincingly validated year after year. From a technology perspective this evolution was largely achieved through incremental improvements in a well established technology/device architecture and materials system. While the engineering achievements...
FDSOI technology with ultra-thin body and box (UTBB) provides a back-gate terminal which can be effectively used to forward bias or reverse bias the MOSFET. Using the back-gate terminals, the SRAM 6T bitcell has been modified resulting in four variants which are differently capable of better read and write margins, enabling lower operating voltage. At the same time, all the variants give improvement...
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