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We report on the reliability of InP/GaAsSb/InP DHBTs dedicated to very high-speed ICs applications. The devices under tests were fabricated by OMMIC [1]. Accelerated aging tests under thermal stress were previously performed on the same technology and the results are detailed in [2]. In this paper, we present the accelerated aging tests under bias stress performed on 15 DHBTs up to 2000 hours. The...
We propose and analyze a high-current III–V transistor design using electron transport in the Γ- and L-valleys of (111) GaAs. Using sp[su3}d5s* empirical tight-binding model for band-structure calculations and the top-of-the-barrier transport model, improved drive current is demonstrated using L-valley transport in a strained GaAs channel grown on an (111) InP substrate. At a body thickness of 2 nm...
In this work we report the performances of an InP/GaInAs DHBT developed in III–V Lab with a TiW metal emitter. 0.5 µm effective emitter size HBTs demonstrate fT and fmax above 320 and 430 GHz respectively. Very high yield 0.7 µm emitter width HBTs showing fT/fmax ∼ 340/400 GHz have been used to fabricate a trans-impedance amplifier with single-ended input and differential output for 100-Gb/s optical...
We fabricated an InP heterojunction bipolar transistor (HBT) with a 55-nm-wide emitter. For an emitter width of 55 nm and that greater than 300 nm, the maximum gain was around 15 and around 120, respectively. To confirm the relationship between the acceptable current density and the emitter width, we measured the current density when the current gain was half its maximum value. The measured current...
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