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Monolithic integration of InP-based materials on Si will allow lasers as well as optical amplifiers operating at 1.55µm to be efficiently included in photonic integrated circuits. We demonstrate here oxide-free heteroepitaxial bonding of InP-clad GaInAs quantum wells to Si, with an atomic-plane-thick reconstruction across the InP-Si interface. The wells photoluminescence emitted-wavelength demonstrates...
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