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This work investigated the field confinement behavior and junction size scaling for an inverted p-down avalanche photodiode, which requires no selective diffusion or ion-implantation and regrowth techniques. With this structure, the small spread of electric field of only 1 µm is obtained. The maximum 3-dB bandwidth of 23 GHz at the multiplication factor of 4.5 is obtained with the diameter of 20 µm,...
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