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Fundamental limitations of CMOS technology and anticipations of Moore's law have motivated researchers to find several alternatives for these devices such as nanowire, carbon nanotube and graphene nanoribbon [1]. In this work firstly, we develop an analytical model for quantum capacitance of monolayer and bilayer graphene. Secondly, resistance of the channel is modelled based on conductance of the...
In order to realize stable SiC (Silicon carbide) devices, metal contacts to SiC with suitable physical and electrical characteristics are required. For example, Ohmic contacts with low specific contact resistances and Schottky contacts with controlled barrier height (ΦB) between SiC and metal are among the most important factors for determining the performance of SiC devices. To date, extensive studies...
We have developed a chaotic oscillator based on the logic gates[1], which are implemented with the basic metal oxide field effect transistors (MOSFETs). Given the importance of MOSFETs in modern electronics, it is important to understand the source of the nonlinearity, and how it originates from the intrinsic characteristics of MOSFETs. In past studies [2], the chaos was observed in a simple nonlinear...
One-dimensional nanocrystals and nanowires due to their high crystal quality, ease of growth, control and diversity in their composition have become promising building blocks in a number of technologies including photovoltaic, chemical sensing and light sources. One of the technological barriers to integrate such nanostructures to devices is the inability in controlling their hierarchical order on...
Since the first isolation of graphene in 2004, graphene research has generated great excitement among device engineers due to the outstanding material properties of this single layer of sp2-bonded carbon atoms. Mobilities in excess of 100,000 cm2/Vs, perfect carrier confinement within one monolayer, and ballistic transport over unprecedented distances make graphene an almost ideal candidate for the...
Semiconductor nanostructures have the potential to make a positive impact on the efficiency and cost of solid state energy devices such as solar cells and light emitting diodes. In this talk I will explore the use of semiconductor nanorods for solar cells and high efficiency LEDs.
We have observed rapid solid-liquid phase-change oscillations [1] in nanocrystalline silicon (nc-Si) microwires while investigating crystal growth from melt at micrometer scale [2] through rapid self-heating. High amplitude oscillations in current through a single Si micro-/nanostructure are achieved as a result of an applied DC bias due to the difference in conductivity between crystalline and liquid...
AlGaN/GaN heterojunction field effect transistors (HFET) are promising candidates for both power and RF applications due to their superior material properties [1]. High-speed switching and reduction in power losses can be achieved by the use of the two-dimensional electron gas (2DEG) that forms between AlGaN barrier and GaN layer. However, a conventional HFET device with a Schottky gate suffers from...
The ongoing interest in the development of GaN-based enhancement-mode high electron mobility transistors (EHEMTs) resulted in several different approaches being proposed, one of them employing a reduction of the gate-to-channel distance. In order to facilitate gate recessing, a technique using a n++ cap layer was suggested by Kuzmik et al. [1], who also analyzed the contribution of the cap layer to...
Recently, semiconductor nanowire and nanotube field-effect transistors (FETs) have been intensively studied as fundamental building blocks for three-dimensional circuit technologies. Si nanowire FETs with multiple nanowire channels are very attractive as they may have higher performance compared with single nanowire transistors. However, techniques for the assembly of Si nanowire FETs remain a barrier...
We report the first simulation study of stress induced in a FinFET channel due to a new stress liner Ge2Sb2Te5 (GST). Volume change in the GST material wrapped around a FinFET was used to induce stress in the channel. We show that a large compressive channel stress can be induced. The channel stress could be further enhanced with device scaling.
Controlling the growth of proper crystal morphology and defect density in Ni catalyst are necessary ingredients for achieving precision number of graphene layers [1] and good yields in CMOS transistor device fabrication. The size of grains can be controlled during sputter deposition but the apparent effects in charility are not apparent until after the high temperature annealing process. XRD analysis...
We report growth of ZnO nanowires and nanorods using an atmospheric pressure, horizontal MOCVD, without any metal catalyst. The ZnO structures were grown on sapphire (110), Si(111) and SiO2/p-Si(111) substrates by controlling the ZnO precursor flow, growth temperature and distance from the injector. Prior to the growth of the nanostructure, a thin film of ZnO was grown at 400°C for 2 mins, DeZ was...
Nanowire transistors (NW Tr.) are promising device structures for ultralow-power LSI [1–3]. In our previous work, we demonstrated Ion improvement of short-channel NW nFETs and pFETs by adopting <100>-oriented NW channel instead of conventional <110> channel [3]. Although low-field mobility in <100>- and <110>-oriented NW Tr. have been thoroughly studied [3,4], the origin of...
Graphene, a recently discovered form of carbon, has received much attention for possible applications in nanoelectronics, due to its excellent carrier transport properties [1]. Graphene nanoribbons (GNRs) are thin strips of graphene, where the electronic properties depend on the chirality of the edge and the width of the ribbon. Zigzag GNRs (ZGNRs) show metalic behavior, whereas armchair GNRs (AGNRs)...
Shockley Stacking fault (SSF) expansion from basal plane dislocations (BPDs) occurs during forward bias operation in 4H-Silicon Carbide (SiC) and causes forward voltage drift in minority carrier SiC devices [1, 2]. Reverse bias breakdown voltage degradation with SSF expansion has also been reported [3]. The SSFs expansion occurs via the electron-hole recombination enhanced dislocation glide (REDG)...
It is well known that 4H silicon carbide (SiC) based metal oxide silicon field effect transistors (MOSFETs) have great promise in high power and high temperature applications. The reliability and performance of these MOSFETs is currently limited by the presence of SiC/SiO2 interface and near interface traps which are poorly understood. Conventional electron paramagnetic resonance (EPR) studies of...
Alternative metal catalysts are of interest for the vapor-liquid-solid (VLS) growth of silicon nanowires (Si NWs) both from a fundamental growth perspective and as a pathway to control the electrical properties. Gold is the most commonly used metal catalyst, however, gold forms deep level electronic states within the bandgap of Si that are undesirable, particularly for photovoltaic devices that are...
As microelectronic technology progresses, the vulnerabilities of different circuit types to various physical effects also shifts with the integrated circuit (IC) size, materials, specific circuit design and similar factors. At the University of Maryland, a systematic study was undertaken on the effects of high-power microwave (HPM) excitation on IC behavior, which demonstrated the wide variety of...
This paper shows how Floating Gate (FG) memory cells behavior during retention tests can be predicted relying on static electrical stress tests. Retention tests are usually performed at High or Low Temperature Bake (HTB or LTB respectively) to provide warning of an impending failure of the memory cell capability to store data. Retention tests are very useful to screen out defective cell populations...
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