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Silicon carbide (SiC) based semiconductor devices have been gaining tremendous traction in the last decade due to the inherent material advantages [1]. While most of the efforts in developing SiC devices are focused on discrete power semiconductors, a team at GE GRC is developing SiC based integrated circuits that can be used in extremely high temperature applications such as geothermal drilling,...
Transition metal oxide resistive memory devices (RMDs) are a promising replacement for transistor-based non-volatile memory. Because of their vertical metal-insulator-metal design, resistive memory devices have the potential for smaller footprints and higher densities than their transistor counterparts. To fully realize the spatial and performance advantages of these devices, new integration pathways...
Metal oxide semiconductor field effect transistors (MOSFET) with SiGe channel and higher-k gate dielectric are studied in this work. Samples with TaON/HfO2 or TiON/HfO2 stacks show larger drain current, transconductance, and smaller subthreshold swing than that with single HfO2 layer. In addition, the reliability of SiGe MOSFET device is clearly improved with TaON/HfO2 stacks in terms of degradation...
Thermoelectric (TE) refrigeration using Si-based nanostructures is an attractive approach for on-chip thermal energy harvesting and targeted cooling of local hotspots [1] due to the ease of on-chip integration and the nanowires' enhanced TE figure of merit [2] ZT=S2σ/(κl+κe) [3]. Silicon-on-insulator (SOI) membranes [4] and membrane-based nanowires [3] and ribbons (Fig. 1) show promise for application...
High efficiency in crystalline solar cells is currently of great importance and can be achieved by a combination of high and low band gaps in heterostructure designs. Such devices absorb in both short and long wavelengths, thus covering wider absorption areas from the solar spectrum. On the other hand, p-i-n cells provide space for excess absorption at specific wavelengths through layers grown in...
Subthreshold characteristics of CMOS devices become important for mixed signal SOCs (System On a Chip) [1]. Since matching of critical devices in important parameters such as IDsat (saturation drain current), VT (threshold voltage), gm (transconductance) and S (subthreshold slope) are important in CMOS analog circuit design, channel orientation and current flow direction should be carefully arranged...
The p-n junction is one of the most widely used technology in the semicondector device. In the various pn junction types like photodiode, solar cell and LED etc., the dark leakage current can determine the device performance and power. Therefor it is very important to minimize the dark leakage current and to optimize the device performance.[1] Among these various pn juncton diodes, photodiode has...
Typical infrared quantum cascade laser (QCL) designs focus on the high-mid and far-infrared regions due to the small intersubband spacing achievable using near lattice matched systems — GaAs/AlGaAs, GaSb/AlAb, GaInAs/GaInSb/InP, etc. Requirements for shorter wavelengths, 3–30μm, force designers to choose laser designs using band-to-band transitions (Type I). Using these designs, it is difficult to...
Among the wide band gap semiconductor materials that have drawn a lot of attention recently, ZnO and SiC are seriously considered as materials for emerging electronics applications. ZnO has received attention for its application for UV light-emitters, transparent high power electronics, sensors, piezo electric transducers, and solar cells, because of its high chemical stability, non-toxicity, low...
As the CMOS device scaling reaches to sub 20 nm scale by 2016 [1], multi-gate MOSFET architectures are poised to replace the conventional bulk devices [2]. Although non-planar multi-gate architectures can come in various forms including double-gate (DG) MOSFETs, FinFET, MIGFET, Π-gate or Ω-gate versions, they operate on the same premise of increasing current drive via multiple channels and better...
We report the calculated absorption coefficient in AlxGa1−xN/GaN quantum well. The calculations account for spontaneous and piezoelectric polarizations and strain induced modifications in band gap and band offsets. The dependence of absorption coefficient and carrier life time on the variations of applied voltage, energy and Al-mole fraction is report in the presence of strain.
Despite burgeoning interest in III-V's for realizing high performance transistors at low power, III-V MOSFEts have been plagued by poor PMOS performance. Realizing high mobility InGaAs PMOS [1] and Ge NMOS [2] has proven to be difficult. To avoid complications in CMOS circuit design and manufacturing [3], it is favorable to employ a single material system that enables both good NMOS and PMOS transistors...
Germanium, with a higher electron mobility than in silicon and with the highest hole mobility, has promise for high performance CMOS circuits. However, for many analogue circuits, bipolar transistors are preferred as they generate less noise than MOS devices. To exploit the high carrier mobility in Ge for RF applications it is therefore necessary to investigate the fabrication of bipolar transistors...
Tunnel-FET (TFET) is a steep-slope device that functions by the control of band-to-band tunneling (BTBT) current at the source/channel junction. It is expected as one of the ultra-low power devices that replace conventional MOSFETs [1]. Schottky source junction is a practical structure for the fabrication of TFETs when the Schottky barrier height is appropriately maintained. Recently, a promising...
The problem of energy saving has today a relevant importance, concerning in particular all the portable devices as smart phone, tablet PC, smart card and so on [1]. In order to improve the features of these products, particular attention is paid to energy consumption of Flash cells in memory arrays. In this work we investigated the Flash floating gate (FG) dynamic behavior during the channel hot electron...
A major shift in logic CMOS technology from planar device to multi-channel device is underway in order to continue the device scaling without degrading short-channel effect beyond 30-nm node [1]. A distinct feature of the multi-channel device is that higher channel dimensionality increases the surface-to-body-volume ratio and improves the control of channel potential by the gate. However, the limited...
We propose SRAM bitcells with asymmetric halo implant dose MOSFET (AH-MOS) by introducing additional masks for halo implant steps. AH-MOS has different drain-source currents (Ids) between forward and reverse directions (Fig. 1). By implanting high and low dose for drain and source regions respectively, Ids flowing from drain to source (forward) gets larger than that from source to drain (reverse)...
The next paradigm shift in display technology involves making them flexible, bringing with it many challenges with respect to product reliability. To compound the problem, industry is continuously introducing novel materials and experimenting with device geometries to improve flexibility and optical performance. The changing landscape, makes it is imperative to have a qualification method that allows...
In recent years FinFET emerges as a promising device to assure the desired performance in the sub-22 nm regime. Among various FinFETs, SOI FinFET shows suppressed leakage current and superior short channel effects. However, it suffers from increased self-heating effect (SHE) due to the adaptation of a low thermal conductivity buried silicon dioxide layer and a ultra thin fin body. Bulk FinFET, on...
Resent enormous growth of LED market has left fare behind the progress in the development of native substrates that is still in the very early stage from the industrial production standpoint. Current approach using sapphire based substrate technology seems to dominate for the current cycle of the industry development. This trend is not only defined by the immaturity of native substrates technology...
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