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We propose a ZnO/Zn1−xMgxO quantum cascade laser (QCL) operating at room temperature as a possible candidate for the generation of THz radiation. In this work, theoretical designs of ZnO/ZnMgO QCLs emitting at 50μm (ΔE=24.5meV) are presented and compared with GaN/AlGaN (at 58.43μm, ΔE=21.23meV), GaN/InGaN (at 52.59μm, ΔE=23.59meV), and GaAs/InGaAs (at 53.33μm, ΔE=23.26meV). The theoretical calculation...
We report the calculated absorption coefficient in AlxGa1−xN/GaN quantum well. The calculations account for spontaneous and piezoelectric polarizations and strain induced modifications in band gap and band offsets. The dependence of absorption coefficient and carrier life time on the variations of applied voltage, energy and Al-mole fraction is report in the presence of strain.
The structural, material and field dependence of the THz lasing frequencies are reported for a QCL based upon GaN/AlGaN and GaN/InGaN heterostructures. The inter-subband transition initiated generation of THz followed by the LO-phonon assisted fast depopulation takes into account the appropriate energy band alignments. Valence and conduction band alignments incorporating spin-orbit and crystal field...
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