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The HfO2 based insulator is promising for resistive random access memory (RRAM). At first in this work, the effects of different oxygen contents in sputtered HfO2 on resistive switching memory are investigated. It is observed that the oxygen flux rate would strongly affect the LRS/HRS current ratio and operation voltage. The switching behavior can be attributed to oxygen vacancy assisted conduction...
Polycrystalline silicon thin-film transistors (poly-Si TFTs) have attracted much attention because of the different applications, such as driving circuits of the active matrix liquid crystal displays (AM-LCDs) and those of the active matrix organic light emitting diode displays (AM-OLEDs) [1, 2]. Nickel-titanium oxide (NiTiO3) deposited by physical vapor deposition was introduced to be a high dielectric...
In this work we present a 3-dimensional (3-D) model for the simulation of Polymer Electrolyte Fuel Cell (PEFC). The model is implemented in our in-house semiconductor and circuit simulator developed at Florida State University, RandFlux [1]. The transport equations are written in a form similar to the transport equations in semiconductor devices, which makes our model easy to be numerically implemented...
For better performance on charge-trapping(CT) flash device, tunneling layer stacks of nitrogen(N)-rich SiN/SiO2 and low temperature(LT) N-rich SiN/SiO2 are studied. The programming and erasing speeds of CT flash device are significantly improved by the tunneling layer stacks due to the lower conduction and valence band offsets of N-rich and LT N-rich SiN. The retention properties of CT flash devices...
Electrical characteristics and reliability of MOS devices with HfO2 or Ti/HfO2/Hf high-k dielectrics are studied and compared in this work. For the MOS device with Ti/HfO2/Hf gate dielectric stack after a PDA at 600°C, its equivalent oxide thickness (EOT) value is 7.1 Å and the leakage density is about 2.05 × 10−1A/cm2.
Impedance spectroscopy has been extensively applied for the diagnosis and evaluation of various types of solar cells. The method applies a sinusoidal electrical stimulus and subsequently measures the impedance (conductance and capacitance) across the terminals of the device for a range of different frequencies and/or temperatures. Based on this measurement, it is possible to extract the energy resolved...
The Boron carbide (BC) is an interesting material due to its chemical and mechanical properties like extremely hard and wear-resistant material, high melting point, low density, good thermal and electrical properties, and great resistance to chemical agents. It has very high neutron absorption cross-section area and makes boron carbide a strong candidate for high technology industries, fast-breeders,...
Ultraviolet-C (UVC) disinfection is considered environmentally friendly since it does not create any chemical load on the environment and does not generate any hazardous byproducts. Mercury lamps (which are essentially fluorescent lights without the phosphors) are currently used by municipalities to generate UVC but mercury lamps are not an attractive solution for low volumes or non-continuous use...
Optoelectronic devices such as light-emitting diodes (LEDs) and lasers emitting in the ultraviolet (UV) spectral range are of great interest for various applications. These include water purification, bioagent detection systems, medical diagnosis devices, UV curing, and material processing. However, the realization of high performance devices within the AlGaInN material system remains still challenging...
Light sources in the wavelength range below 300nm have attracted extensive attention due to their applications in instrumentation and in disinfection of water, air and surface. Nitride-semiconductor-based, light emitting diodes (LEDs) are of especially great interest due to numerous advantages compared to conventional mercury lamps. Although significant progress of more than 9mW of quasi-CW power...
Phase change memory (PCM) is an emerging fast and non-volatile memory technology. PCM devices are based on the resistivity contrast between the amorphous (high resistivity) and crystalline (low resistivity) phases. Amorphization (Reset) is achieved by by a large and short electrical pulse which melts a small volume of material and allows fast cooling. Crystallization (Set) is achieved by heating the...
Fully-depleted (FD) silicon-on-insulator (SOI) MOSFETs have attracted considerable attention due to their superior short-channel immunity and ideal subthreshold characteristics. With the size of device scaling down, the subthreshold operation has become an important area in integrated circuits design nowadays. A number of theoretical models accounting for the subthreshold characteristics of SOI MOSFETs...
For future scaling to the end of the ITRS roadmap, novel structures like FinFETs are required to improve electrostatic integrity of MOSFETs with gate lengths shorter than 35 nm [1–4]. Classic fully-depleted FinFETs with a high aspect ratio are not compatible with existing planar process flows. A Tri-Gate transistor has the advantage of being more compatible. It is even possible to produce low-profile...
Radio Frequency (RF) energy harvesting aims at collecting and converting ambient RF wave energy into storable electrical energy to power electronics. The reported RF energy density in urban areas can be as high as 0.5μW/cm2 which corresponds to an input power level of 16.6 μW (−17.6 dBm) at 1800MHz [1]. It is thus appealing to convert the RF energy in the environment into electrical energy and use...
The U.S. Army Research Laboratory is investigating performance and reliability issues associated with the development of n-channel 4H-SiC DMOSFET devices for advanced power conversion systems. The threshold-voltage instability (VT) effect generally observed in state-of-the-art SiC MOSFETs can be explained by an electron tunneling mechanism, where electrons tunnel in and out of near interfacial oxide...
Bulk AlN substrates are an ideal solution for the growth of ultraviolet-C light emitting diodes (UVCLED). They are optically transparent at this wavelength and closely lattice and thermally expansion matched to the layers required for the device structure. In addition pseudomorphic growth can be achieved allowing for low dislocation density in the active region of the device [1]. This approach has...
Recent experiments show the improvement of the inversion channel mobility of 4H-SiC MOSFETs after the gate post-oxidation annealing process [1–5]. Thus, further investigation of the post-oxidation annealing process is required to improve the channel mobility of 4H-SiC MOSFETs. This paper studies the effect of hydrogen, nitrogen, phosphorous, and arsenic passivation on total near interface trap density...
Silicon (Si), silicon carbide (SiC), gallium nitride (GaN), zinc oxide (ZnO) and other semiconductor nanowires (NWs) show great promise as sensing elements for the electrical detection of biomolecules [1–3]. In order to enable chemiresistor-type NW devices that utilize direct electronic sensing of biomolecules, one must first develop an analyte-specific functionalization of the nanowire surface and...
ZnO based LEDs are received great attention as it has wide band gap (∼3.36 eV) and large exciton binding energy (∼60 meV) at room temperature [1]. It is known that the basic components for LEDs are high quality p-type and n-type layers. The undoped ZnO exhibits intrinsic n-type conductivity and doping with III group elements such as B, In, Al, and Ga will enhance the electrical properties. But, it...
Silicon Carbide (SiC) nanowires and nanorods have attracted much interest because of their novel physical properties resulting from quantum confinement. The electrical and optical properties due to low-dimensional nanostructures can be tailored for potential applications in nanoelectronics, nanosensors, and biotechnology. However, in all of these applications large quantities of these nanostructures...
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