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As the technological challenges in obtaining high power ultraviolet-C light emitting diodes (LEDs) on bulk AlN substrates are being overcome, the next challenge faced is the manufacturability. One of these challenges consists of introducing a 10×10mm substrate into a fabrication facility that is processing 2” and larger diameter substrates. This has been successfully carried out using a standard visible...
Bulk AlN substrates are an ideal solution for the growth of ultraviolet-C light emitting diodes (UVCLED). They are optically transparent at this wavelength and closely lattice and thermally expansion matched to the layers required for the device structure. In addition pseudomorphic growth can be achieved allowing for low dislocation density in the active region of the device [1]. This approach has...
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