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A simple technology of 4H-SiC Schottky diode with oxide ramp termination is presented. The ramp is controlled by two undoped layers: an annealed (compact) oxide layer and as deposited layer, respectively.
This work is aimed at optimising the static performance of a high voltage SOI LDMOSFET. Starting with a conventional LDMOSFET, 2D and 3D numerical simulation models, able to accurately match datasheet values, have been developed. Moving from the original device, several design techniques have been investigated with the target of improving the breakdown voltage and the ON-state resistance. The considered...
Interactions between two counter-propagating self-trapped beams at infrared wavelengths are experimentally observed in bulk photorefractive semiconductor material InP:Fe. The experimental results are in good concordance with computer simulations. Using these simulations we show that it is possible to develop optical interconnections based on waveguides induced by soliton interactions in a bulk semiconductor...
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