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In this article, an optimized transient performance CCL-LDO is proposed, which adopts the controlling method of the charge pump phase-locked loop. With 1μF decoupling capacitor, the experimental results based on 0.13μm CMOS process show that the output voltage is 1.0V, and when the workload changes from 100μA to 100mA transiently, the stable dropout is 4.25mV, settling time is 8.2μs and undershoot...
Dual gate AlGaN/GaN MOS HFET with Al2O3 as gate oxide layer was fabricated. In comparison with normal dual gate Schottky HFET, dual gate MOS HFET exhibits much lower gate leakage current, larger transconductance and output current. Besides, the dual gate MOS HFET shows excellent breakdown characteristic.
A lateral power MOSFET with the extended trench gate is proposed in this letter. The polysilicon gate electrode is extended to the substrate, which improves the breakdown voltage (BV) and specific on-resistance (Ron). It indicates by simulation that the Ron of 1.86mΩ.cm2 with a BV of 174V in the proposed structure is nearly 53% less than the Ron of 3.96mΩ.cm2 with a BV of 126V in the typical structure.
Stack-transistor structure is often used in RF applications for higher power handling capability and/or isolation. LDMOSFET may provide similar advantages with smaller device area and lower series resistance. The purpose of this work is extracting the RF parameters of a LDMOSFET and design a RF switching circuit with these parameters. The design trade-off between LDMOS and CMOS technologies was discussed...
CMOS compatible power devices have been an intensely pursued area in the past few decades. Power integrated circuit technologies are now accessible by many designers via popular foundry services. This paper is a brief review on modern integrated power transistors including the recently introduced CMOS compatible Orthogonal Gate extended drain MOSFETs (OG-EDMOS) and the lateral superjunction power...
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