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In this paper, we demonstrate a nano‐channel array (NCA) structure to realize the control of threshold voltage (Vth) of AlGaN/GaN HEMTs. The fabricated NCA structure consists of multiple nano‐channels parallelly connected together. Using this structure, the Vth of AlGaN/GaN HEMTs can be systematically shifted from ‐3.92 V for a conventional depletion‐mode (D‐mode) AlGaN/GaN HEMT to 0.15 V for an enhancement‐mode...
Ti/Al/Ni/Au (200/1200/500/2000Å) Ohmic contact on AlGaN/GaN was prepared and it was subjected to thermal aging experiments. Thermal processing at 400 and 500°C did not change the contact resistance significantly, while high temperature storage at 600°C resulted in a surge in the contact resistance. The Al–Au alloy in the contact metal is believed to re-melt because its lowest melting temperature is...
Dual gate AlGaN/GaN MOS HFET with Al2O3 as gate oxide layer was fabricated. In comparison with normal dual gate Schottky HFET, dual gate MOS HFET exhibits much lower gate leakage current, larger transconductance and output current. Besides, the dual gate MOS HFET shows excellent breakdown characteristic.
Compared with Ti/Al/Ni/Au Ohmic contacts, Ti/Al/Ti/Al/Ti/Al/Ti/Al/Ti/Al/Ni/Au with multiple Ti/Al stacks improved the thermal stability. Multiple-stacked Ohmic contacts showed lower degradation during long-time thermal aging at 600°C. The samples after degradation were tested with Transmission Electron Microscopy (TEM) to research the structural reasons. TEM results show that multiple stacks can avoid...
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