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A comprehensive model for the electron mobility in AlGaN lattices-matched to GaN is developed. A large number of experimental and theoretical mobility data and the results of Monte Carlo transport simulations in previous literature have been evaluated and referred as the basis for the model development. The proposed model describes the variation of the field-dependent mobility with carrier concentration,...
A Magnesium Doped Layer (MDL) under the 2-DEG channel and a Drain Metal Extension (DME) are proposed to provide a new degree of freedom in the optimization between breakdown voltage (BV) and specific-on-resistance (Ron-sp) in AlGaN/GaN HEMTs. The surface electric field of the proposed structure is distributed more evenly when compare to the MDL-only structure with the same dimensions. A breakdown...
The terahertz frequency GaN Gunn diodes with GaN and AlGaN electron launchers are investigated by using an improved NDM model of GaN. The simulations demonstrate that there exists a shift of the oscillation mode from dipole domain mode toward accumulation mode with increased temperature, and the AlGaN launcher GaN Gunn diode can generate better power performance at stable oscillation mode than the...
It has been proposed in the literature to use metal field plates (FPs) in order to increase the breakdown voltage (BV) of AlGaN/GaN HEMTs. In this article we analyze the possibility of using multiple FPs to increase the gate-to-drain BV. We show that FPs with variable oxide thickness (with thinner oxide towards the gate electrode and thicker oxide thickness towards the drain electrode) increase the...
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