The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The concept of a bandgap is so deeply ingrained that it is hard to imagine an integrated circuit built on graphene, whose pristine state is a gapless material with charge carriers obeying the relativistic Dirac spectrum, analogous to light. Entertaining such notion is so appalling that many have proposed to cut graphene into bits and pieces, thinking that size quantization effect would recover a bandgap...
A novel CO2 non-dispersive infrared (NDIR) sensor using the mid-infrared (mid-IR) hollow fiber as a gas cell has been demonstrated. The mid-IR hollow fiber is chosen for its optimum transmission band (bandgap) overlap with CO2 fundamental absorption spectrum around 4.26 μm to serve as a filter. A comparison with the system using a smooth metal cell is presented. The signal noise suggests that a measurement...
High-quality germanium oxynitride (GeON) gate dielectrics for Ge-based metal-oxide-semiconductor (MOS) devices were fabricated by plasma nitridation of ultrathin thermal oxides on Ge(100) substrates. Although ultrathin oxides with abrupt GeO2/Ge interfaces can be formed by conventional dry oxidation, air exposure results in serious electrical degradation. It was found that plasma nitridation forms...
Energy bandstructures of unstrained and strained [100] silicon nanowires are calculated with nearest neighbor (NN) sp3d5s* tight binding model. Square nanowires with four {110} bounding facets of various thicknesses are simulated. It is found that bandgaps of nanowires increase with decreasing the wire thickness. Uniaxial strain effects are accounted for by displacing the silicon atoms and modifying...
The band structure of GNM is studied using TB method. It is found that some surface states appear in the vicinity of the Fermi levels. The electron might be trapped on these surface states due to very large effective mass. The increase of the effective bandgap of GNM as the increase of the radius of the nanohole, may be responsible for the increase of current on/off ratio for GNM devices observed...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.