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A comprehensive model for the electron mobility in AlGaN lattices-matched to GaN is developed. A large number of experimental and theoretical mobility data and the results of Monte Carlo transport simulations in previous literature have been evaluated and referred as the basis for the model development. The proposed model describes the variation of the field-dependent mobility with carrier concentration,...
A Magnesium Doped Layer (MDL) under the 2-DEG channel and a Drain Metal Extension (DME) are proposed to provide a new degree of freedom in the optimization between breakdown voltage (BV) and specific-on-resistance (Ron-sp) in AlGaN/GaN HEMTs. The surface electric field of the proposed structure is distributed more evenly when compare to the MDL-only structure with the same dimensions. A breakdown...
The terahertz frequency GaN Gunn diodes with GaN and AlGaN electron launchers are investigated by using an improved NDM model of GaN. The simulations demonstrate that there exists a shift of the oscillation mode from dipole domain mode toward accumulation mode with increased temperature, and the AlGaN launcher GaN Gunn diode can generate better power performance at stable oscillation mode than the...
The influence of neutron irradiation on the deep levels in GaN epilayer is studied. Thermal stimulated current (TSC) and low temperature photoluminescence (PL) techniques are used to determine the position of deep levels. Four traps are found in irradiated GaN and five traps in unirradiated sample by resolving TSC spectrum. The activation energy (Et), capture cross section (St), and concentration...
InGaN/GaN multi-quantum-well (MQW) nanowires and accordingly light-emitting-diodes (LEDs) were fabricated on the n-GaN/sapphire substrate with a nano-patterned SiO2 film as growth mask. The structural characteristics, optical and electrical properties were investigated. the observed results show that a InGaN/GaN MQW nanowire has smooth surface morphologies and triangular cross sectional structure...
GaN “Smart Discrete” power devices were realized using the AlGaN/GaN-on-Si platform, where two built-in intelligent self-protection functions were demonstrated. First, an AlGaN/GaN normally-off high electron mobility transistor (HEMT) with reverse drain blocking capability was realized, featuring a Schottky contact controlled drain barrier. Compared to the Schottky drain structures, the new design...
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