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The high breakdown voltage AlGaN/GaN HEMTs with source-terminated field plate was firstly fabricated for high frequency and high power application, employing by CF4 plasma treatment for enhancement-mode (E-mode). The results showed that by adding the distance of gate to drain, LGD from 5 um to 15um, the breakdown voltage of the device was rapidly increased 350V, whose value is from 50V to 400V while...
High breakdown voltage GaN HEMTs was developed for power electronics application. The device with source connected field plate (FP) was fabricated, which demonstrated perfect hard breakdown characteristics. A high breakdown voltage of 740V was obtained in air ambient while gate-drain spacing Lgd and FP length LFP equaled to 20μm and 2μm respectively. Specific on-resistance of the device was 14mΩ.cm...
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