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Porous organosilica thin films using 1,2-bis (triethoxysily) ethane, triethoxymethylsilane and a poly (ethylene oxide)-poly (propylene oxide)-poly (ethylene oxide) triblock copolymer template have been prepared by spin-on technique. The films were characterized by cross-sectional scanning electron microscopy, x-ray diffraction and Fourier-transform infrared spectroscopy. After thermal treatment at...
Silicon nanowire transistor with side-gate and back-gate has been fabricated by electron beam lithography combined with dry oxidation on a doped silicon-on-insulator wafer. The effects of back-gate and side-gate on the properties of single electron transport were investigated by measuring the channel current as function of the applied gate voltages. The tunable single electron effect and Coulomb oscillations...
Thermal transient measurement of the 808 nm GaAs-Based laser diodes (LDs) before and after the constant current stress are presented and discussed in this paper. Aging tests are carried out under the conditions of the constant current stress (1 A) for 255 hours. The total thermal resistance increases from 7.0 to 8.8°C/W before and after degradation. Furthermore, the contribution of each component...
This paper presents a novel first-order temperature compensated current reference. The measured temperature coefficient of this current reference is less than 290 ppm/°C over the temperature range from -20°C to 110°C. What's more, it is compatible with standard CMOS technology, which makes its application more flexible.
Typical bipolar resistive switching behavior are observed in the In/poly-Fe2O3/Nb-SrTiO3 (Nb-STO) devices. Rectifying I-V characteristics along with switching ratio significantly related to the polarity of read voltage have been found. A negative read voltage remarkable enhances the switching ratio to 107 comparing with 102 for the positive polarity, which demonstrates an efficient way to improve...
A high performance plasmonic thermal emitter with narrow bandwidth emission property were proposed and fabricated. This emitter is based on a metal coated two-dimensional (2D) photonic crystal of air holes in a silicon substrate. The PC structure is found to be highly effective in suppressing the thermal emission, which can yield 2 orders of magnitude more efficient that conventional IR sources. Thermally...
The activation characteristics of Si ion-implanted gallium nitride (GaN) have been investigated. High-resolution X-ray diffraction (HRXRD) analyses indicate that ion-implanted damage can be effectively recovered by rapid thermal annealing (RTA) up to 1100°C. With the implantation dose 1016cm-2, the sample presents strong n-type conductivity, reaching a maximum sheet carrier concentration 2×1015cm-2...
This paper reports the design and initial experimental investigation of a vacuum/airtight package, based on a multilayered LTCC substrate that acts not only as a chip carrier with flexible interconnects but an integrated panel with multiple functional structure. Design, validation and experimental results for various cooling microchannels embedded into the substrate are presented; the substrate temperature...
A smart temperature sensor based on 0.35um ASMC CMOS process with an inaccuracy of ±1°C from -55°C to 125°C is presented. The sensor uses substrate vertical bipolar transistor to measure the temperature and errors resulting from nonidealities in the readout circuit are reduced to 0.1°C level by applying dynamic element matching (DEM) and chopping offset cancellation techniques. By using pseudo-random...
This paper presents the design, fabrication and synthesis of a carbon nanotube Pirani vacuum gauge which comprises 5-μm-long SWNTs as heater and Au/W as electrodes. Results show that the TCR of SWNTs is negative and about -0.004/°C. SWNTs Pirani vacuum gauge was demonstrated with a dynamic range of 2500Pa to 40Pa in air environment. The average sensitivity of SWNTs Pirani vacuum gauge is about 914Ω/Pa...
The influence of neutron irradiation on the deep levels in GaN epilayer is studied. Thermal stimulated current (TSC) and low temperature photoluminescence (PL) techniques are used to determine the position of deep levels. Four traps are found in irradiated GaN and five traps in unirradiated sample by resolving TSC spectrum. The activation energy (Et), capture cross section (St), and concentration...
This work presents the mechanism of Stress induced leakage current (SILC) under NBT stress. Experiment results show that there are three kinds of oxide traps generated under NBT stress: hole traps with full recoverable characteristic, hydrogen related traps with irrecoverable characteristic and a kind of positive trap which can promote the hole tunneling after neutralization. The cause of SILC is...
A novel CMOS temperature sensor embedded in a passive UHF RFID tag is presented. The sensor consists of a temperature-to-current converter, two current-starved ring oscillators and two digital counters. High power consumption band-gap voltage references and traditional ADCs are not used for low power design. Post-layout simulation show that the power consumption is 0.64 μW with a supply voltage of...
This paper summarizes our recent investigations of nano-wire n type tunneling field effect transistor (n-TFET) reliability by experimental measurements and physical analysis [1-3]. Large PBTI and HC degradations which are very different from those in conventional n-MOSFETs were observed. The results are interpreted by different degradation mechanism in TFET.
Chemical bonding states of doped impurities, boron (B) and arsenic (As), in silicon (Si) shallow junctions were studied by soft X-ray photoelectron spectroscopy (SXPES). A step-by-step shallow etching and Hall effect measurements were combined with the SXPES to investigate correlation between chemical bonding state and electrical activation of the impurities, and to clarify depth profiles of concentration...
This paper presents a comparison of two gamma radiation sensors intended to be embedded in CMOS integrated circuits. Both sensors are based on a current source, whose output depends upon the cumulated radiation dose, followed by a current-frequency converter. The two sensors differ in the sensing elements: one uses conventional transistors and the other a floating gate transistor. Results are discussed...
In this paper, electron mobility (μ<;sub>e<;/sub>) and hole mobility (μ<;sub>h<;/sub>) of (110) nFETs and pFETs are studied, respectively. It is demonstrated that, because of the non-parabolicity along <;110>, the conventional effective mass model is insufficient to accurately evaluate the quantum confinement effects in (110) nFETs..
Single-crystal Ge films on insulating substrates are desired to achieve advanced 3-dimensional large-scale integrated circuits (3D-LSIs) and thin-film transistors (TFTs). We have developed the rapid-melting Ge growth seeded from Si substrates, which achieves giant Ge on insulator (GOI) structures with (100), (110), and (111) orientations. Driving force to initiate the lateral growth is clarified as...
This paper presents the methodology to obtain the snapback curves and second breakdown point of an ESD stressed device through TCAD simulation. This method allows an excellent ESD simulation convergence and then good ESD prediction with a significantly reduced computation time. One 0.5um CMOS technology has been simulated for experimental support.
A novel two stage wakeup unit is proposed for Semi-passive temperature logger tag based on ISO 18000-6c Rev1 air interface protocol for RFID tags. This wakeup unit assists the tag to realize a temperature log1 function, a high sensitivity and low standby current level. It has been designed and fabricated in SMIC 0.18um process as part of the whole tag. Measurement results show that the tag can reduce...
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