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We propose circuit techniques for an 8T dual-port (DP) SRAM to improve its minimum operating voltage (Vddmin). Active bitline equalizing technique improves the write margin whenever a write-disturb occurs. This technique is applicable for both synchronous and asynchronous clock frequencies between ports. We designed and fabricated a 256 kb DP-SRAM macro using 28-nm low-power CMOS technology and achieved...
Infrequent dynamic events like VCC droops and temperature changes result in the use of a static VCC guard-band. Measured data on a 16KB 8T array featuring tunable replica bits illustrate the opportunity of eliminating a majority of the static guard-band in memory arrays, resulting in lower operating VCC/power.
The fastest ever 4.2 Gbps 3D-Solid State Drive (SSD) with multi-level cell (MLC) NAND flash memories is proposed. The proposed NAND channel number detector automatically detects the number of channels, that is, the number of NAND chips written at the same time. Based on the number of channels, the intelligent program-voltage booster adaptively optimizes the switching clock. As a result, the proposed...
A between-pair skew compensator for parallel data communications is presented. It can detect time skew between two independent data sequences using continuous-time correlations and then automatically align the two using a voltage controlled wide-bandwidth data delay line. A 5Gb/s sub-bit between-pair skew compensator in 0.13μm CMOS occupies 0.03mm2 active die area and dissipates 22.5mW.
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