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This presentation is an overview of standard Integrated Circuits technology that enables the integration of the chemical sensors with the necessary driving and signal conditioning circuitry on the same chip. A variety of Complementary Metal Oxide Semiconductor (CMOS)-based chemical sensors found in the literature and the microprocessing technologic steps necessary for the integration of microelectromechanical...
Negative Bias Temperature Instability (NBTI) has become one of the critical reliability concerns as scaling down CMOS technology especially on the pMOSFET device. A simulation study had been conducted on 32 nm conventional pMOSFET using the technology CAD (TCAD) Sentaurus Synopsys simulator tool. In this paper, the effects of the gate oxide thickness together with drain bias variations on the NBTI...
Taguchi method was used to analyze the experimental data in order to get the optimum average of silicide thickness in 45nm devices. The virtually fabrication of the devices was performed by using ATHENA module. While the electrical characterization of the devices was implemented by using ATLAS module. These two modules were used as design tools and helps to reduce design time and cost. In this paper,...
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