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The contribution will comment on the role of silicon carbide based power semiconductor devices in industrial electronics with a focus on high power densities and improved efficiency. Starting with an introduction into the basic properties of silicon carbide semiconductors it will be sketched how these features can be favorably used in order to minimize volumes of electronic components and/or reduce...
SiC device is known by its outstanding property, such as low on resistance and short switching time for high voltage device. Recently, the SiC device technology is rapidly progressed; however the device performance in a power conversion circuit has not been clearly shown. The purpose of this work is to apply the SiC device in a DC-DC converter and to evaluate the power loss and efficiency of the converter...
We have developed SiC-Schottky barrier diodes with a JBS structure that have characteristics of low forward voltage and low leakage current at 3 kV. Further, we have built a prototype of a 3 kV/200 A SiC hybrid module, equipped with Si-IGBTs and SiC-Schottky barrier diodes. We have achieved to reduce the recovery loss and the turn-on loss, by using the SiC hybrid module and a high-speed drive circuit...
High-switching-frequency operation is essential for reducing the size and weight of LC filters in medium-voltage power converters. In this work, hybrid pairs of 6 kV SiC-PiN diodes and 4.5 kV Si-IEGTs have been applied to realize the high-switching-frequency operation. A gate-driving technique with an extremely low gate resistance called hard gate driving is employed for low switching losses of the...
The 5×4.2 mm2 chip of the SiC DIMOSFET was fabricated and tested. The drain-source avalanche breakdown voltage without any gate bias (Vgs=0V) is measured to be >1000V. The drain current (Id) >40A is observe under the conditions of Vds=1V and Vgs=+20V. Typical Ron and specific Ron are measured to be 22 mΩ and 3.5 mΩcm2 with Vth=2.3V. The SiC DIMOSFET is introduced into the PE circuits of the...
The superior properties of silicon carbide (SiC) power electronic devices compared with silicon (Si) are expected to have a significant impact on next-generation vehicles. When super high-speed switching devises such as SiC-VJFET are operated in a power converter, their high dv/dt rate in the rise time and the fall time causes a high-frequency common-mode current. It is necessary to evaluate the EMI...
The high current SiC MOSFETs and high-temperature operation IPM with SiC MOSFETs were fabricated. 300A switching in inductive load circuits was performed using a single chip SiC trench MOSFET. And 250°C (the junction temperature of SiC DMOSFETs) operation of SiC IPMs with a new high-temperature bonding method and high-temperature materials (case, encapsulation) was successfully performed.
In the environmentally-friendly vehicles that are powered by electric motors, as represented by hybrid vehicles (HVs), enhancing the performance and reducing the size of the power semiconductors are becoming essential for vehicles to achieve low-fuel consumption and high-power performance. This is also the case for HV systems to facilitate adoption in multiple vehicle models. This paper looks back...
A Smart Grid with distributed generation is critical for reducing greenhouse gas emissions. However, current power converters and circuit breakers built with silicon switches are very bulky and inefficient, making their use difficult in practical Smart Grid systems. The development of high voltage power devices based on SiC will be a critical development in building a Smart Grid with distributed and...
In high-power density power converter designs, power losses of power devices are essential design parameters because they determines the volume of cooling systems. The power loss of a SiC power module using a SiC Implantation and Epitaxial MOSFET (SiC-IEMOSFET) has been evaluated in the junction temperature range from 150°C to 250°C and the current density range from 100 A/cm2 to 250 A/cm2. By using...
The unique wide bandgap properties of SiC allow the creation of high performance normally-off vertical JFET power device. Due to the vertical nature of the device, it can easily be designed with blocking capability exceeding 2kV with RDS(ON), sp > 3mΩ-cm2, resulting in the lowest specific on-resistance for enhancement mode SiC devices with VBR <; 1200V. The low RDS(ON), sp yields a small die...
With efforts to reduce the cost, size, and thermal management systems for the power electronics drivetrain in hybrid electric vehicles (HEVs) and plug-in hybrid electric vehicles (PHEVs), wide band gap semiconductors including silicon carbide (SiC) have been identified as possibly being a partial solution. Research on SiC power electronics has shown their higher efficiency compared to Si power electronics...
Silicon carbide (SiC) is an expected candidate as a material for the next generation power semiconductor devices. In this paper, the authors evaluate the power device loss of a DC-DC buck converter, where the silicon (Si) free wheeling diode is replaced with an SiC Schottky barrier diode (SBD). The loss reduction of the DC-DC buck converter is discussed with respect to switching frequency and duty...
The ruggedness of SiC pn diode was investigated. The SiC pn diode was confirmed to operate at over 800°C, a higher temperature than Si device's destruction temperature, and to endure a large current of over 1000A (2000A/cm2) per one chip. The resistance of the diode showed a positive temperature coefficient until its destruction. This was different from the destruction of Si pn diodes.
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