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SiC device is known by its outstanding property, such as low on resistance and short switching time for high voltage device. Recently, the SiC device technology is rapidly progressed; however the device performance in a power conversion circuit has not been clearly shown. The purpose of this work is to apply the SiC device in a DC-DC converter and to evaluate the power loss and efficiency of the converter...
Silicon carbide (SiC) is an expected candidate as a material for the next generation power semiconductor devices. In this paper, the authors evaluate the power device loss of a DC-DC buck converter, where the silicon (Si) free wheeling diode is replaced with an SiC Schottky barrier diode (SBD). The loss reduction of the DC-DC buck converter is discussed with respect to switching frequency and duty...
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