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The contribution will comment on the role of silicon carbide based power semiconductor devices in industrial electronics with a focus on high power densities and improved efficiency. Starting with an introduction into the basic properties of silicon carbide semiconductors it will be sketched how these features can be favorably used in order to minimize volumes of electronic components and/or reduce...
This paper proposes a non-isolated converter that is based on a flyback topology. The proposed converter has high conversion ratio and achieves higher efficiency with reduced voltage and current stresses on the power semiconductors when compared to the conventional flyback converter. Analysis and key converter operating waveforms are reported in the paper. Experimental results taken from a 60 W laboratory...
Power electronic converters use power semiconductor devices. By improvement of the device performances, the electric power density, defines as ratio of converter output power and converter volume, is continuously increased. However, volume of the Cooling System to occupy a substantial portion of power electronic converter, therefore improvement of the Cooling System performance is one of the important...
This paper concerned with an advanced practical development of utility grid-tied 3 phase voltage source type is instantaneous current controlled inverter with minimized pulse switching number-based pulse modulation strategy. It is a key issue that newly-proposed utility inverter incorporates a new conceptual extended neutral point voltage shifting module into the d-q synchronous rotating cordinate...
Using wideband gap semiconductors (SiC, GaN) appear as possible solution to the growing demand for the development of high temperature power electronics. These devices are devoted to work in harsh environments mainly for "on board applications" like automobile, aircraft and space exploration. In some cases, high temperature is associated to the environment itself (when the converter is located...
New IGBT modules to realize advanced neutral-point-clamped (A-NPC) 3-level power converters have been developed for the first time. The power loss of the IGBT modules developed is minimized by using 6th generation IGBT and FWD and 2nd generation RB-IGBT dies, the stray inductance between each pair of main terminal is as low as 40nH, and the arrangement of the terminals are optimized for constructing...
The 5×4.2 mm2 chip of the SiC DIMOSFET was fabricated and tested. The drain-source avalanche breakdown voltage without any gate bias (Vgs=0V) is measured to be >1000V. The drain current (Id) >40A is observe under the conditions of Vds=1V and Vgs=+20V. Typical Ron and specific Ron are measured to be 22 mΩ and 3.5 mΩcm2 with Vth=2.3V. The SiC DIMOSFET is introduced into the PE circuits of the...
The superior properties of silicon carbide (SiC) power electronic devices compared with silicon (Si) are expected to have a significant impact on next-generation vehicles. When super high-speed switching devises such as SiC-VJFET are operated in a power converter, their high dv/dt rate in the rise time and the fall time causes a high-frequency common-mode current. It is necessary to evaluate the EMI...
A novel active gate drive method for high power IGBTs is proposed in this paper. It makes use of 2 simple capacitors and several Transient Voltage Suppressors (TVS) to gain different feedback gains in different turn-off transient period, in order to suppress the turn-off over voltage and control turn-off voltage rise slope. Comprehensive study among several application oriented methods is carried...
This paper presents a new CIPOS™ (Control Integrated Power System) in DIL (Dual-in-line) package, which combines with the features of Infineon trench field stop RC (Reverse conducting) IGBT and a newly optimized Infineon SOI (Silicon On Insulator) gate driver to achieve the excellent solution for up to 2.5kW motor drives. It also comes along with flexible internal schematics, which are tailor made...
This paper deals with a resonant gate-drive circuit for fast and high-voltage power semiconductor devices, which is equipped with optical fibers for both gate control signal and dc power supply. A resonant inductor connected with the gate terminal makes it possible to charge or discharge the gate-to-source voltage by using the parallel resonance between the inductor and the input capacitance of the...
In the environmentally-friendly vehicles that are powered by electric motors, as represented by hybrid vehicles (HVs), enhancing the performance and reducing the size of the power semiconductors are becoming essential for vehicles to achieve low-fuel consumption and high-power performance. This is also the case for HV systems to facilitate adoption in multiple vehicle models. This paper looks back...
Silicon carbide (SiC) is an expected candidate as a material for the next generation power semiconductor devices. In this paper, the authors evaluate the power device loss of a DC-DC buck converter, where the silicon (Si) free wheeling diode is replaced with an SiC Schottky barrier diode (SBD). The loss reduction of the DC-DC buck converter is discussed with respect to switching frequency and duty...
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