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The contribution will comment on the role of silicon carbide based power semiconductor devices in industrial electronics with a focus on high power densities and improved efficiency. Starting with an introduction into the basic properties of silicon carbide semiconductors it will be sketched how these features can be favorably used in order to minimize volumes of electronic components and/or reduce...
The 5×4.2 mm2 chip of the SiC DIMOSFET was fabricated and tested. The drain-source avalanche breakdown voltage without any gate bias (Vgs=0V) is measured to be >1000V. The drain current (Id) >40A is observe under the conditions of Vds=1V and Vgs=+20V. Typical Ron and specific Ron are measured to be 22 mΩ and 3.5 mΩcm2 with Vth=2.3V. The SiC DIMOSFET is introduced into the PE circuits of the...
The superior properties of silicon carbide (SiC) power electronic devices compared with silicon (Si) are expected to have a significant impact on next-generation vehicles. When super high-speed switching devises such as SiC-VJFET are operated in a power converter, their high dv/dt rate in the rise time and the fall time causes a high-frequency common-mode current. It is necessary to evaluate the EMI...
In the environmentally-friendly vehicles that are powered by electric motors, as represented by hybrid vehicles (HVs), enhancing the performance and reducing the size of the power semiconductors are becoming essential for vehicles to achieve low-fuel consumption and high-power performance. This is also the case for HV systems to facilitate adoption in multiple vehicle models. This paper looks back...
Silicon carbide (SiC) is an expected candidate as a material for the next generation power semiconductor devices. In this paper, the authors evaluate the power device loss of a DC-DC buck converter, where the silicon (Si) free wheeling diode is replaced with an SiC Schottky barrier diode (SBD). The loss reduction of the DC-DC buck converter is discussed with respect to switching frequency and duty...
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