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This paper reports an experimental study of a boron spike effect on electrical characteristics of SiGe HBTs fabricated by cold wall type ultra-high vacuum (UHV)/CVD technology. Two types of pre-treatment procedures were carried out to investigate the effect of the boron spike formed during heating step before epitaxial growth. One was Type-A (heating temperature=800??C) and the other was Type-B (HF...
In this paper a new process for deposition of silicon oxide near room temperature is presented. Electrical measurements of the annealed oxide yield interface state densities of Dit = 1??1010 cm-2 eV-1 and fixed positive charge densities of Nf = 1??1011 cm-2. Characterization of the deposited oxide by ellipsometry results in a good refractive index (1.40-1.45). The low P-etch-rate (0.7-1.4 nm/s) shows...
In this paper an epi-micromachining technique is presented which combines the advantages of both surface and bulk micromachining. The process is based on the use of a buried sacrificial porous layer and offers high flexibility. Horizontal and vertical accelerometer structures have been fabricated using the epitaxial layer as construction material. Buried p+ silicon was used as sacrificial material...
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