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In this paper, the performance of a novel anode-shorted Lateral Insulated Gate Bipolar Transistor fabricated using a novel 500 V, 2.5 ??m digital HV-CMOS process is evaluated for the first time. The process sequence is unique in that it is common for all three technologies viz., the Junction Isolation, conventional Dielectric Isolation and the Double Epitaxial Layer Dielectric Isolation. Unlike the...
The paper reports a Silicon Drift Detectors (SDD) with on-chip front-end electronics. These detectors will be used for high resolution X-rays spectroscopy applications, either at room temperature or at cryogenic conditions, and can efficiently operate at very high rates of the impinging radiation (105 cps/cm2). Silicon Drift Detectors, proposed for the first time in 1983, are fully depleted detectors...
This paper is aimed at the experimental demonstration of a new LIGBT structure with enhanced latch-up characteristics for power IC applications. For this purpose, several LIGBTs have been fabricated, which allows the comparison of the electrical characteristics of the proposed structure with those of previously reported LIGBTs. The RESURFed devices show a 360 V breakdown voltage and structures with...
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