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A novel model describing resistance curves in terms of material migration through the movement of vacancies and the generation of vacancies and immobile damage, mainly at grain boundaries, due to electrical current flow is presented. It is shown that various measured curves can be well fit. The effects of mechanical stress can also be described. Simulations are shown in bamboo structures (BS) and...
The protective properties of NMOS transistors for the Charged Device Model have been investigated. With 2D device simulation it is shown that the base transition time is the limiting factor for CDM NMOS transistor protection. An improved compact transistor model accounting for intrinsic base resistance is presented.
With the increasing complexity of both microelectronics and micromechanics has come a greater need to accurately characterise the mechanical properties of deposited layers. In the case of microelectronics mechanical stress can have a detrimental effect on transistor characteristics, whereas in micromechanics the stress may cause buckling or mechanical failure. There are several techniques available...
The paper discusses mechanisms of process-induced damage observed in plasma etched CMOS devices. The low-level oxide leakage and degraded breakdown properties are investigated and experimentally simulated with thin oxide MOS structures. It is shown, that both low-level oxide leakage and degraded QBD, with their strong antenna dependence to plasma charging, are a result of temperature accelerated low-current...
Anomalous substrate current behavior at accelerated hot-carrier (HC) stress conditions is observed in LDD n-MOSFETs. HC stress is applied at maximum substrate current condition (VG??VD/2) on devices of a 0.7 ??m process with 15nm gate oxide thickness and effective gate lengths varying between 0.5 ??m and 1.2 ??m. Initially both drain and substrate current decrease during stress, due to hot-carrier...
The problem of calculation of stresses in the strained layer stripes is simplified if attention is confined to the middle of the surface layer of the stripes. In this region the vertical component of the stress and the shear components of the stresses and strains are zero and the strain component ??yy (parallel to the length of the stripe) is known in the stripe coordinates. Hooke's equation is first...
The dielectric breakdown of ultra-thin 3 to 4 nm SiO2 layers used as a gate dielectric in poly-Si gate capacitors is investigated with tunnel current stressing. A soft breakdown phenomenon is demonstrated for these ultra-thin gate oxide layers that corresponds with an anomalous increase of the stress induced leakage current and the occurrence of fluctuations in the current. The occurrence of soft...
A simple model is proposed to monitor the dc current gain long-term instability in the AlGaAs/GaAs heterojunction bipolar transistor (HBT). It is derived from the theory that the recombination current at the extrinsic base surface increases with time due to the surface degradation process. Furthermore, the initial 1/f noise and base leakage current characteristics have been used to provide the needed...
This paper presents a surface micromachined piezoresistive absolute pressure sensor with improved performance. A sensitivity of about 11 mV/V/bar in the range 0-500 mbar overpressure has been achieved. The sensor contains four polysilicon piezoresistors arranged in a Wheatstone bridge at the underside of a polysilicon membrane to reduce invironmental influences (e.g. light, moisture). Position and...
The effects of the passivation process conditions on the interface trap density at the tunnel oxide and the endurance characteristics upon 1E6 program/erase (P/E) cycling in the NAND type flash memory have been investigated. As the rf power level on plasma enhanced(PE) CVD of SiN increases, the interface trap density(Nit) at the tunnel oxide also increases and the endurance characteristics become...
A mechanical stress analysis of the LDD-MOSFET structure is presented. It includes the cumulative effects from the oxidation, the thermal cycles and the intrinsic stresses, and uses a non-linear viscoelastic model. A calibration of the rheological properties is also proposed for APCVD doped oxides.
AlGaAs/InGaAs PM-HEMT's DC behaviour has been investigated at low temperature. Depending on the bias conditions a remarkable collapse of the drain current, ID, or a considerable shift in the threshold voltage VT have been observed. A complete recovery of the I-V curve has been observed at high values of the applied bias. Trapping and detrapping (by impact ionization) of electrons in deep levels present...
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