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With the increasing complexity of both microelectronics and micromechanics has come a greater need to accurately characterise the mechanical properties of deposited layers. In the case of microelectronics mechanical stress can have a detrimental effect on transistor characteristics, whereas in micromechanics the stress may cause buckling or mechanical failure. There are several techniques available...
In this paper, we present a new and simple method to extract the source (RS) and drain (RD) parasitic resistances of a MOSFET separately, using small-signal transconductance (gm) and drain conductance (gd) measurements on a single MOSFET. Unlike most earlier methods that depend on the measurements of the d.c. resistances of several MOSFETs, our method can be directly applied to situations involving...
We have discussed in terms of drain current level, DIBL control and long term reliability three kinds of NMOS drain engineering (LDD, LATID and abrupt S/D ) implemented on a 0.25 μm CMOS technology in order to define the proper design/process device. First, main experimental results and device lifetime of these various drain structures have been compared. Then analysis of aging measurements as a function...
AlGaAs/InGaAs PM-HEMT's DC behaviour has been investigated at low temperature. Depending on the bias conditions a remarkable collapse of the drain current, ID, or a considerable shift in the threshold voltage VT have been observed. A complete recovery of the I-V curve has been observed at high values of the applied bias. Trapping and detrapping (by impact ionization) of electrons in deep levels present...
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