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A novel model describing resistance curves in terms of material migration through the movement of vacancies and the generation of vacancies and immobile damage, mainly at grain boundaries, due to electrical current flow is presented. It is shown that various measured curves can be well fit. The effects of mechanical stress can also be described. Simulations are shown in bamboo structures (BS) and...
This paper presents an enhanced methodology for statistical worst-case simulation which accounts for the effects of statistical fluctuations in IC manufacturing processes. The inclusion of important SPICE model parameter correlations and the application of second order regression models give both realistic and more accurate worst-case parameter sets. Furthermore, a realistic prediction of circuit...
A generalized version of the small-signal drift-diffusion model accounting for trapped charge dynamics is presented; the explicit introduction of two new continuity equations for the trapped electrons and holes is avoided by incorporating them in the original three equations, thus allowing for easier implementation while mantaining the same degree of accuracy of the full system. Simulations carried...
Deep impurities like gold or platinum are extensively used in semiconductor technology to improve the switching characteristics of the devices by decreasing the carrier lifetimes. This, on the other hand, has the undesired effect of increasing the material resistivity. Here a complete model is presented, describing the effects of gold/platinum doping on both the steady-state and transient characteristics...
An analytical investigation of the minority-carrier transport properties at arbitrary injection levels is presented. Firstly, it is shown that the minority-carrier transport equation is exactly soluble at high-injection levels, yielding closed-form expressions for the injected current, transit time and sheet resistance. Then, a simple analytical model valid at arbitrary injection levels is proposed...
In this paper an extension to the collector charge description for compact bipolar epilayer models is presented. With the aid of this extension, monotonic fT and Early voltage behavior is ensured when transistor operation extends into the quasi saturation region. The modification leads to a major improvement in the modelling of signal distortion at high current levels and high frequencies.
A novel measurement method to determine the series resistance from one single MOSFET is discussed. Not only the gate voltage dependence of the series resistance Rseries at low drain bias can be measured now but also the increase of the drain series resistance Rd with increasing drain bias. In addition attention is paid to the modeling of the series resistance in the full bias range. The measurement...
Self-heating effect in ultrashort gate length pseudomorphic HIEMTs is investigated. An original model is developed which accounts for both bidimensional heat transfer and quasi-bidimensional hydrodynamic carrier transport. In a room temperature simulated 0.15??m gate length HEMT, the temperature rises at almost 400K at Vgs= 0.4V and Vds= 5V. The temperature gradients in the device can be neglected...
Be diffusion during post-growth annealing has been studied in InGaAs epitaxial layers. To explain the observed concentration profiles, a General Substitutional-Interstitial model is proposed. A simultaneous diffusion by dissociative and kick-out models is suggested. The concentration dependent diffusivity has also been covered to perforn an improved data fitting of Be diffusion profiles.
The photorefractive effect in electrooptic materials provides a very promising tool for image processing applications. Semiconductor multiple quantum well (MQW) structures are attractive materials due to the short response time and the high value for the electrooptic coefficient. If the electric field is applied perpendicular to the MQW planes, than the electrooptic behaviour is associated with the...
The purpose of this work is to determine the advantages gained by using high mobility strained silicon in MOSFETs. It is frequently argued that for deep submicron devices the important parameter is velocity saturation rather than mobility. Computer simulation has been used to demonstrate that improvements in the cut-off frequency, ft, of around 50% in n-channel devices can be achieved in 0.1 ??m MOSFETs...
MINIMOS-NT, a generic device simulator is presented. This simulator is capable of dealing with complex device geometries as well as with several physical models represented by certain sets of partial differential equations. A description of the structure of the simulator is given, which shows the basic idea of splitting the device geometry in distinct regions. Within these ``segments'', arbitrary...
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