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A two-step growth approach was used to monolithically integrate p-i-n InGaAs photodiodes with a InAlAs/InGaAs lattice matched on InP HEMT circuit. The HEMT structure is first grown by MBE and exhibits a Hall mobility in excess of 11000 cm2/Vs with a ns of 2.6.1012 cm??2 at room temperature. After the patterning of these epilayers, the p-i-n diode structure is selectively regrown by CBE using SiO2...
We report on the investigation of the optoelectric properties of a Metal-Semiconductor-Metal (MSM) photodetector (PD) based on two-dimensional electron gas (2DEG). The layer sequence is compatible to an Al-free High Electron Mobility Transistor (HEMT) layer stucture in the InP/GaInAs material system [1]. Therefore our device can easily be integrated into HEMT circuits. The photoresponse of the MSM-2DEG...
The electrical source-drain breakdown mechanism of pseudomorphic (PM) HEMTs has been studied in a pulse and DC regimes. It has been revealed that a maximum drain voltage is limited by an avalanche injection breakdown of the undoped i-GaAs layer (buffer). It has been established that observed breakdown is the result of the mutual intensification of an avalanche generation rate near the drain and an...
The potential of the HEMT as microwave and millimetre wave MMIC switch is investigated. Therefore, we determine a suitable small-signal model to represent both switching states. This enables us to interpret the HEMT switch performance in terms of layer structures and layout parameters. This analysis shows that HEMTs are useful MMIC switch candidates due to their low Ron at a relatively small gate...
We report on a spectroscopic electroluminescence study at cryogenic temperatures of InP based high-electron-mobility-transistors (HEMT's) with ultrashort gate length. Both low energy (0.7-0.9 eV) and high energy (1.3-2.2 eV) recombination bands are observed and are related to radiative recombination of carriers created by impact ionization. At low energy, the evolution of the luminescence as a function...
MINIMOS-NT, a generic device simulator is presented. This simulator is capable of dealing with complex device geometries as well as with several physical models represented by certain sets of partial differential equations. A description of the structure of the simulator is given, which shows the basic idea of splitting the device geometry in distinct regions. Within these ``segments'', arbitrary...
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