The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
A novel model describing resistance curves in terms of material migration through the movement of vacancies and the generation of vacancies and immobile damage, mainly at grain boundaries, due to electrical current flow is presented. It is shown that various measured curves can be well fit. The effects of mechanical stress can also be described. Simulations are shown in bamboo structures (BS) and...
The effects of dynamic self-heating in SOI MOSFETs are well known. For circuit simulation, it is attractive to model these effects using a simple first order electro-thermal model, but the validity of such models has not been verified previously. In this paper, direct measurements are presented of the small signal drain conductance of SOI MOSFETs for frequencies from DC up to 300 MHz. The conductance...
In this paper we report mobility measurements on highly doped n-MOSFET's with both a 12nm thick oxide nitrided in N2O ambient and a standard gate oxide of the same thickness. While mobility in standard devices are in good agreement with data already available in literature, the nitrided samples feature a remarkable mobility degradation. Besides, at 77K the high field region of the experimental curves...
This paper reports the results obtaines with a collimated PVD Ti/TiN barrier layer used for contacts on TiSi2 in a 0.35μm technology. The collimated process is compared with the standard PVD one, in terms of electrical performances measured on CMOS wafers. The influence of an anneal after the baffler deposition is also studied. We have shown that the collimated process, contrary to the standard one,...
A novel measurement method to determine the series resistance from one single MOSFET is discussed. Not only the gate voltage dependence of the series resistance Rseries at low drain bias can be measured now but also the increase of the drain series resistance Rd with increasing drain bias. In addition attention is paid to the modeling of the series resistance in the full bias range. The measurement...
The thin-film nature of silicon on insulator (SOI) material complicates considerably the extraction of accurate threshold voltage (VTf) values. This work assesses the accuracy of the standard VTf extraction techniques and presents an alternative method, independent of series resistance, with improved accuracy. The improved accuracy of the threshold voltage measurement enables physical parameters such...
It is believed that significant velocity overshoot effects are responsible for the high performance of Pseudomorphic HEMTs (PsHEMTs) with InGaAs channels grown on GaAs substrates. The expected overshoot is associated with the low effective mass in the channel and the large ?? - L separation and is clearly demonstrated in numerous Monte Carlo simulations. Average electron velocities well in excess...
The electrical properties of p-type doped poly-Si and poly-GexSi1-x, (x˜0.3) gate material were studied. The effect of dopant concentration and anneal temperature on the electrical behavior of these polycrystalline layers is investigated. A lower sheet resistance, higher Hall mobility and higher dopant activation is found for GexSi1-x compared to Si at equal doping levels. MOS capacitors with B+ and...
The RF noise properties of an advanced silicon bipolar technology are investigated. The influence of the lateral scaling on the noise figure is studied experimentally and compared with the predictions of conventional noise modeling. The potential of the technology is demonstrated by noise figures below 1 dB for frequencies up to 2 GHz and below 2 dB up to 7 GHz.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.