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Electrical results are presented on low thermal butdget polysilicon emitters for Si/Si1-xiGex HBTs. Rapid thermal anneals of 30s in the temperature range 775-900??C are investigated, and arsenic and phosphorus emitter dopanits are compared. The base current is shown to be very sensitive to the temperature of the anneal that is used to diffuse the emitter dopant from the polysilicon into the underlying...
This paper is aimed at the experimental demonstration of a new LIGBT structure with enhanced latch-up characteristics for power IC applications. For this purpose, several LIGBTs have been fabricated, which allows the comparison of the electrical characteristics of the proposed structure with those of previously reported LIGBTs. The RESURFed devices show a 360 V breakdown voltage and structures with...
The electrical properties of p-type doped poly-Si and poly-GexSi1-x, (x˜0.3) gate material were studied. The effect of dopant concentration and anneal temperature on the electrical behavior of these polycrystalline layers is investigated. A lower sheet resistance, higher Hall mobility and higher dopant activation is found for GexSi1-x compared to Si at equal doping levels. MOS capacitors with B+ and...
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