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Vertical nMOS transistors with channel lengths down to 70nm and thin gate oxides have been fabricated using LPCVD epitaxy for the definition of the channel region instead of fine line lithography. The devices show drain current and transconductance values comparable to very advanced planar transistors. For the shortest channel length a stronger increase of current is observed and is attributed to...
The behavior of the minority carrier mobility in the silicon bulk as well as in the MOS inversion layer at the Si/SiO2 interface has been investigated experimentally. The well known MOS inversion layer mobility of charge carriers in silicon amounts to approximately one half of the bulk value usually without any distinction between majority and minority carriers. For an accurate comparison the bulk...
In this paper we report mobility measurements on highly doped n-MOSFET's with both a 12nm thick oxide nitrided in N2O ambient and a standard gate oxide of the same thickness. While mobility in standard devices are in good agreement with data already available in literature, the nitrided samples feature a remarkable mobility degradation. Besides, at 77K the high field region of the experimental curves...
Variants of P in situ spike doped poly-Si emitters are compared with an As implanted poly-Si emitter for use in HBTs. The main goal is the optimization of the thermal process after emitter doping. The base B diffusion is shown to be stronger influenced by the emitter dopant outdiffusion for P than for As. This effect is investigated by means of an improved B SIMS profiling, and by CV measurements...
Be diffusion during post-growth annealing has been studied in InGaAs epitaxial layers. To explain the observed concentration profiles, a General Substitutional-Interstitial model is proposed. A simultaneous diffusion by dissociative and kick-out models is suggested. The concentration dependent diffusivity has also been covered to perforn an improved data fitting of Be diffusion profiles.
This work provides direct evidence of a significant reduction in the concentration of phosphorus in silicided polysilicon, due to post-TiSi2 formation at typical process temperatures (e.g BPSG deposition / densification). The phosphorus loss is a thermally activated process, with an activation energy of 1.26 eV, as evidenced by isochronal anneals in the temperature range 750 to 950??C. The reduction...
A reduced emitter doping concentration in deep submicron devices is often observed, if an implanted polysilicon is used as diffusion source for the emitter. The resulting enhanced base width leads to a decrease of the cut-off frequency in devices with narrow emitter widths. In addition, two-dimensional effects have to be taken into account for transistors with submicron dimensions. This work demonstrates...
The effect of random fluctuations of the donor density in the quantum well of an intersubband single quantum-well infrared phototransistor (QWIPT) with triangular emitter and collector barriers is studied theoretically. It is shown that the fluctuations of the donor distribution in the plane of the QW can significantly increase the dark current. It reduces the photocurrent-to-dark ratio and detectivity.
The electrical properties of p-type doped poly-Si and poly-GexSi1-x, (x˜0.3) gate material were studied. The effect of dopant concentration and anneal temperature on the electrical behavior of these polycrystalline layers is investigated. A lower sheet resistance, higher Hall mobility and higher dopant activation is found for GexSi1-x compared to Si at equal doping levels. MOS capacitors with B+ and...
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