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We report a Ge/Si APD with a gain of 8.8 when biased at 90% of breakdown voltage operating at 1310 nm. The dark current density is less than 82 uA/cm2 at biases up to -20 V.
We propose and simulate a thin-film crystalline solar photovoltaic cell comprised of two junctions - one in the Si top layer and the other in the Ge bottom layer. Assuming an anti-reflection coating on the front surface, we have shown that optimal solar cells favor a thin Si layer and a thicker Ge layer. For AM1.5G solar irradiance, we predict efficiency of ~20 % for a cell in which the Si film thickness...
A design for a quantum-confined Stark effect electro-absorption modulator is described. We use kmiddotp and effective-mass modelling methods to optimise the quantum well dimensions, and employ strain engineering to target 1.3-mum light.
We designed the coplanar high-speed modulator with Ge/SiGe quantum wells, and demonstrated 25 GHz of modulation with 3.125 GHz of eye diagram using quantum-confined Stark effect.
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