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The SGADER (Silicon Glass Anodic-bonding and Deep Etching Release) technology is a well-developed platform for many MEMS devices. An anti-footing aluminum film is a low cost but effective approach to minimize the footing effect in SGADER process, but such Al film cannot be removed completely with normal Al wet etchant after DRIE. In this paper, an optimized etching process for cleaning the anti-footing...
We presents a micromachined interferometric accelerometer fabricated using Silicon Glass Anodic-bonding and Deep Etching Release (SGADER) process. The accelerometer consists of a glass-silicon-glass sandwich structure. A proof mass is suspended by beams attached to the silicon support substrate and a diffraction grating on the bottom glass substrate resides under the proof mass. The sandwich structure...
In our previous study, we fabricates large grain low temperature poly-crystalline silicon film by aluminum induced crystallization (AIC) method. The fabrication process is to deposite aluminum layer on top of the a-Si:H film deposited by plasma enhanced chemical vapor deposition (PECVD) [1]. In this paper, we discussed more about the effect of different aluminum thickness of the AIC process. Five...
We present an advantageous fabrication technology for the integration of pressure sensor into the multi-sensor for micro weather station. Differing from traditional silicon piezoresistive or capacitive pressure sensor, we use platinum piezoresistive pressure sensor in the integration, which can greatly simplify the whole process and also has an excellent performance. We also use adhesive bonding with...
This paper discusses a novel method of modeling and simulation of anodic bonding technique, which is widely used in fabrication of MEMS device and micro system. The emphasis are the bond expansion model and extended time formula of silicon-glass anodic bonding, and based on which, visual simulation of the process is achieved. In practical experiments, by utilizing the math model, simulation result...
Nanoscale field-effect transistors are of interest not only for ultra-scale integrated circuits, but also for next-generation active-matrix flat-panel displays. High-resolution flat-panel displays are typically composed of several million individual picture elements (pixels), and in active-matrix displays each pixel contains one or more field-effect transistors that precisely control the pixel brightness...
This paper reports a novel method of anodic bonding with 3 intermedia layers, silicon carbide, tungsten and silicon dioxide. The bonding process lasting 10 minutes is in vacuum, with temperature 400degC, pressing force 1000 N and voltage 1300 V. During the process, Si+ and O- ions react at the interface of silicon and glass wafers which create Si-O bonds and make bonding stable. After removing off...
This paper experimentally compared the performance of two existing anti-notching methods for silicon on glass structures in deep reactive ion etching process. The two methods employed a same concept, by sputtering an electrically conducting metal layer to evacuate the charges of etching radicals to silicon substrate and eliminate the buildup of electric field. The difference between them is where...
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