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In this study, the viability of growing a CuInSe2 thin film solar absorber by sputtering using a single target composed of CuSe and InSe powders was investigated. It was found that the ability to obtain a sputtered film with a stoichiometric composition was greatly dependent on the substrate temperature and that the optimum conditions could be obtained by adjusting the sputtering radio frequency power...
Nanocrystalline FeSi2 (NC-FeSi2) thin films were grown on Si(111) substrates by facing-targets DC sputtering at room temperature using FeSi2 targets. The NC-FeSi2 films showed hopping conduction behavior, which was confirmed by the temperature dependence of the electric conductivity. n-Type NC-FeSi2/p-type Si and n-type NC-FeSi2/i-Si/p-type Si heterojunctions were prepared to be employed as photovoltaics...
MgXZn1-XO, a ZnO-based ternary compound, has been recognized as a promising material to be used in UV light emitting devices, UV laser diodes and UV detectors. In this paper, a batch of MgxZn1-xO films were fabricated using radio frequency sputtering on glass substrates with a Mg0.32Zn0.68O target. Then the structure and the optical properties of these films after being treated at different annealing...
Ultravoilet (UV) photodetectors have been fabricated by rf magnetron sputtered ZnO films. The average grain size of ZnO films were 15-20 nm. Photo-response (Ion/Ioff) of as-grown ZnO film of thickness 100 nm was maximum (3.8 times 103) having relatively small response time ~90 ms for UV intensity of 140 muW/cm2 (lambda= 365 nm). ZnO films were irradiated by pulsed Nd:YAG laser corresponding to both...
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