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The design of Si/SiGe HBT for high-frequency microwave power amplification was presented in this paper. The material profile structure of the device was designed. A comb liked structure with 6-fingered emitter was employed for the SiGe HBT. Then the device was fabricated by using the buried metal self-aligned double mesa process and high resistivity substrate in a 3 ??m manufacture process line. The...
Mobility enhancement by strain is a critical element in today??s CMOS technology, and enables continued performance scaling. By modulating fundamental material properties, various strained Si techniques boost device and circuit performance independent of geometric and power supply scaling. Challenges for strained Si in aggressively scaled technology demand new ideas and materials.
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