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This paper presents a cost-effective low power 45 nm bulk technology platform, primarily designed to serve the wireless multimedia and consumer electronics need. This technology platform features carbon co-IIP in the nMOS halo, laser annealing scheme, stress liner on the 45??-rotated wafer (<100>) for process simplicity to achieve high device performance and low leakage together. Drive current...
High-permittivity (high-k) dielectrics with HfO2/HfxSi1-xOy/Si structures were fabricated using plasma oxidation and subsequent annealing of Hf/SiO2/Si structure. By replacing SiO2 film of initial structure from plasma oxidized SiO2 to thermal oxidized SiO2, the drastic decrease of traps in interfacial layer (IL: HfxSi1-xOy) could be successfully achieved, which shows interface state density of 1??10...
With the rapid reduction in feature size of ultra large scaled integrate (ULSI) circuits, the microdefects in Czochralski silicon (Cz-Si) such as oxygen precipitates play increasingly important roles in the reliability of devices. In recent years, the novel properties of impurity (nitrogen, germanium and carbon) doped Cz-Si materials have attracted increasingly considerable attentions. In this presentation,...
We present a study of optical characteristics in visible and vacuum ultra-violet range of porous low-k dielectric films (prepared by chemical vapor deposition), and the constituent materials: Carbon doped oxide (SiCOH) matrix and organic porogen. The materials have been deposited as thin film samples and cured by thermal annealing and UV irradiation for various times. The optical properties of the...
The fabrication of Germanium-On-Insulator (GeOI) by wafer bonding and ion-cut approach was investigated. With cyclic HF/DIW cleaning and N2 plasma surface activation, large-area layer transfer of GeOI substrates was realized by ion-cut processes with bulk Ge wafer as the donor wafer. The GeOI substrates are thermally stable up to 550??C annealing and surface roughness can be smoothed down to 0.3 nm...
BiFexCr1-xO3 (x=0.4~0.6) thin films were formed on Pt/Ti/SiO2/Si (100) substrates by chemical solution deposition. The spin-coated, dried and calcined films were finally annealed in a mixed gas of N2 and O2 (N2:O2=4:1) at 450, 500, 550 and 600??C. X-ray diffraction analysis revealed that polycrystalline grains of BiFeO3 and BiCrO3 coexist in the films, and that double perovskite Bi2FeCrO6 crystallites...
Polycrystalline silicon (polysilicon) has been used as an important structural material for microelectromechnical systems (MEMS) because of its compatibility with standard integrated circuit (IC) processes. As the structural layer of micromechanical high resonance frequency (high-f) and high quality factor (high-Q) disk resonators, the low residual stress and low resistivity are desired for the polysilicon...
Negative bias temperature instability (NBTI) in PMOS has emerged as one of the critical reliability concerns in deep sub-micron devices. A comprehensive study has performed to improve the device NBTI performance by process optimization. It is found that the most effective ways to reduce the NBTI degradation are to control the nitrogen concentration and profile in the nitrided gate oxide, to implement...
Current-induced breakdown phenomena of carbon nanofibers (CNFs) for future on-chip interconnect applications are presented. The effect of heat dissipation via the underlying substrate is studied using different experimental configurations. Scanning electron microscopy (SEM) techniques are utilized to study the structural damage by current stress. While the measured maximum current density in the suspended...
Although the strained-Si channel engineering seems to be rather compatible with the existing mainstream CMOS process, the use of strained Si on SOI virtual substrates introduces new process and integration issues that need to be addressed for successful manufacturability and reliability. Even for ideal strained Si on SOI substrates, the impacts of various CMOS process steps, e.g., patterning, oxidation,...
The physical and electrical characteristics of atomic layer deposited RuO2 nanocrystals embedded in high-?? HfO2/Al2O3 films in an n-Si/SiO2/HfO2/RuO2/Al2O3/Pt memory structure have been investigated. A small size of <10 nm and high-density of ~ 1.6 ?? 1012/cm2 for the RuO2 nanocrystals have been observed by high-resolution transmission electron microscope (HRTEM). The RuO2 metal nanocrystals and...
Metal ions embedded in dielectric films may play an important role in the reliability of advanced interconnect systems. In this talk, we will discuss the generation and drift of different metal ions such as Cu, Ta, and Ti into the dielectric materials from gate electrodes under an external electric field at elevated temperatures. Some strategies to eliminate the generation of metal ions will also...
In this paper, hafnium dioxide, HfO2, one of the promising high-k dielectric films is studied. Capacitance-Voltage measurements were carried out to investigate properties such as oxide charges and interface trap charges that exist in the dielectric. The investigation has been carried out by experiment and modeling. Annealing experiments in forming gas at 380??C were conducted on the MOS capacitors...
Current-induced breakdown phenomena of carbon nanofibers (CNFs) for future on-chip interconnect applications are presented. The effect of heat dissipation via the underlying substrate is studied using different experimental configurations. Scanning electron microscopy (SEM) techniques are utilized to study the structural damage by current stress. While the measured maximum current density in the suspended...
In this paper, we present the investigation of inverse narrow width effect (INWE) of 65 nm low-power process with dual gate oxide shapes. To evaluate the impact of STI process on narrow devices, we conducted different experiments in STI process steps, including STI liner, STI elevation, STI liner annealing and STI nitride pullback. The result shows only STI liner annealing and STI nitride pullback...
Enhanced flash memory device characteristics using ALD TiN/Al2O3 nanolaminate charge storage layers have been investigated. After annealing treatment, the TiN nanocrystals embedded in Al2O3 films with a small diameter of ~3 nm and a high-density of >1??1012/cm2 have been formed. The memory devices show a high programming speed of ??Vt >1 V@Vg/Vd=8 V/8 V, 10 ??s and an erasing speed of ??Vt >1...
LaAlOx with a permittivity of 17 is fabricated successfully by ALD method. Enhanced deposition rate, improved uniformity and self-limiting behavior were observed for LaAlOx compare to La2O3 deposition. The mechanism behind improvement is proposed. ALD LaAlOx is found to be thermally stable up to 850??C anneal. Compared with Al2O3 blocking oxide control samples, the SONOS devices with LaAlOx blocking...
In this paper, we investigated the broad sensitized luminescence properties of the Er-doped HfO2 films synthesized by pulsed laser deposition and ion implantation techniques, focusing on the mechanism of energy transfer in host matrix. The characteristics of photoluminescence (PL) in the Er-doped and undoped HfO2 films were analyzed with varied measuring temperatures. Based on the PL and PL excitation...
Metal induced polycrystalline silicon (poly-Si) films composing of continuous zonal domain (CZD) have been obtained through pre-defined crystalline nucleation lines. The impact of glass substrate shrinking on subsequent alignment process is determined. The crystallization process is precisely controllable and the annealing time can be shorter than one hour. P-channel thin film transistors (TFTs) built...
A thin palladium layer (~20 A) was selectively formed on top of amorphous germanium film before annealing and the effects of palladium layer on the lateral crystallization behavior of the amorphous germanium film were investigated through optical microscope, Raman spectroscopy, transmission electron microscopy, energy dispersion X-ray spectroscopy and selective area electron diffraction. Lateral crystallization...
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