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This paper presents a MOSFET scaling study based on the current 45 nm technology generation. The study is based on a real 35 nm gate length design, to which the simulation tools are carefully calibrates. Features such as strain enhancement, and high-?? / metal gates are included in the simulations, which then exhibit equivalent performance to state-of-the-art bulk devices. Realistic choices of device...
In this paper, the characteristics and mechanism of the transition metal oxide (TMO) based resistive switching memory (RRAM) devices were addressed. The results show that doping in oxide matrix materials, electrode material, and operating mode of the set/reset process may significantly affect the resistive switching behaviors of RRAM devices. Optimizing the dopants and matrix materials, electrode...
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