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Performances of AlGaN/GaN HFETs have much improved recently and very high potential of this heterostructure for high power and high frequency electronic devices has been verified. Application of new device technologies such as field plate, recessed gate, digital pre-distortion circuit and dual field plate was essential to realize such high device performances both at 2 GHz, 5GHz and 26 GHz. However,...
Large current carrying capabilities of AlN/GaN/InN based heterostructures and high breakdown voltages make this materials system uniquely suited for applications in high power and/or high frequency electronic devices, including power amplifiers, broadband amplifiers, power switches, and radio frequency switches. AlGaN/GaN insulated gate transistors have additional advantages of extremely low leakage...
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