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Off-state leakage current in a 65 nm partially depleted (PD) floating-body (FB) SOI technology is modeled and analyzed with emphasis on its drain-voltage dependence. Modeling accuracy of the off-state leakage current is highly dependent on modeling of parasitic currents, although their direct contribution to the leakage may be negligible in lower-power/high-performance technologies. The underlying...
This work studies the analog performance of uniaxially and biaxially strained single-gate fully depleted SOI nMOSFETs and standard and strained Si (sSOI) n-type triple-gate FinFETs with high-?? dielectrics and TiN gate material. The analysis is performed focusing on some important analog figures of merit such as transconductance, Early voltage, output conductance and intrinsic voltage gain. It is...
Plasma-based technologies such as plasma immersion ion implantation and deposition (PIII&D) are widely used. In addition to the capability to alter the materials surface, novel microelectronic structures can be fabricated. In this invited paper, our recent research activities on the application of plasma technologies to microelectronics are reviewed. Silicon-on-insulator (SOI) is replacing conventional...
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