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Effect of the flat band voltage reduction (roll-off) in highly scaled high-k/metal gate stacks is discussed. The proposed mechanism explains the roll-off phenomenon as caused by the metal electrode/high-k dielectric-induced generation of positively charged oxygen vacancies in the interfacial SiO2 layer in the high-k dielectric stack. The model is consistent with the observed roll-off dependency on...
We use Multi-Subband Monte Carlo simulations to understand which mechanism is mainly responsible for the mobility degradation observed in nMOSFETs featuring high-kappa dielectrics. Direct comparison with the experimental data of Casse et al. [1] points out that for realistic interfacial layer thicknesses the effect of surface optical phonons on the mobility is very modest, and that the measured mobility...
In the framework of fully depleted devices, we report up to 150 mV VT tuning towards the Si conduction band by implantation of Te into molybdenum capped with TiN, the dielectric being HfO2. Moderate post implant anneal seems to have no effect on the VT shift while high temperature anneal is needed to shift the EWF significantly. The temperature applied to the devices during the entire process is therefore...
In this paper we compare Fully-Depleted SOI (FDSOI) devices with different BOX thicknesses with or without ground plane (GP). With a simple High-k/Metal gate structure, the 32 nm devices exhibits Ion/Ioff performances well situated for low power (LP) applications. The different BOX thicknesses and ground plane conditions are compared with bulk shrunk technology in terms of variability and noise. 0...
Silicon nanowire based discrete trapped charge-storage nonvolatile memory cell employing high-kappa dielectrics with metal gate is presented for the first time. The nanowire TAHOS (TaN/Al2O3/HfO2/SiO2/Si) memory fabricated using top-down method in nearly gate-all-around (GAA) architecture showed higher P/E speed than SONOS. In TAHOS, the erase speed is found almost equal to the program speed. The...
We report on p-MOSFETs based on La2O3, Al2O3 and a mixture of both as high-k dielectric deposited by molecular beam epitaxy (MBE). Mobilities of about 140 cm2/Vs were achieved, which are 1.3 to 1.5 times larger than the universal hole mobility of Si/SiO2. This demonstrates the potential advantage of La2O3-based Ge p-MOSFETs over Si devices. The negative threshold voltages VT, which range between -0...
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