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The thermal stability of Pt and C doped Ni-silicide films was studied. For Ni(Pt)Si layers the addition of e.g. 10% of Pt to the Ni sputtering target results in an improvement of the thermal stability of the Ni(Pt)Si up to 750degC (30 s). Recently, it was discovered that the addition of C to the NiSi film has an even larger effect. The end result is a C-doped NiSi film with a remarkable thermal stability...
In this work we report the growth of C-based nanostructures by means of radio-frequency (RF) magnetron sputtering at different temperatures. We found that the deposition temperature has a huge influence on the structure and chemical composition of the C-based materials obtained. In the temperature range 400degC-600degC we obtain nanocolumns made of carbon and nitrogen (CNx), due to the incorporation...
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