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The interaction between sub-melt laser annealing and an embedded Si1-xGex source/drain (S/D) module has been studied in more detail by means of a PFET transistor evaluation and blanket layer characterization. If the integration of the Si1-xGex source/drain and laser anneal modules is not optimized, defects are introduced into the Si substrate as a result of the additional thermal stress. The presence...
Non-melt laser annealing has been investigated intensively to form ultra-shallow junction. Particularly, effect of low temperature annealing prior to non-melt laser annealing was studied. It is found that the leakage current under reverse bias of p+/n diodes was decreased by about two orders of magnitude in low temperature pre-annealing / laser annealing sample as compared with that of laser annealing...
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