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The application of lasers for annealing of wafer-based and thin-film microelectronic devices is steadily increasing. Excellent control of material characteristics (for example, dopant activation profile) can be achieved through proper selection of laser parameters, such as wavelength, pulse duration and fluence, which directly influence the laser material interaction. In this paper, we present several...
In this work we present a new low-temperature poly-silicon (LTPS) TFTs fabrication process, based on excimer laser annealing, on polyimide (PI) substrate. The PI is spun on Si-wafer, used as rigid carrier, thus overcoming difficulties in handling flexible freestanding plastic substrates, eliminating the problem of plastic shrinkage with high temperature processing and allowing the use of standard...
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