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There is a clear and increasing interest in short time annealing processing far below one second, i.e. the lower limit of Rapid Thermal Processing (RTP) called spike annealing. This was driven by the need of suppressing the so-called Transient Enhanced Diffusion in advanced boron-implanted shallow pn-junctions in silicon technology. Meanwhile the interest in flash lamp annealing (FLA) in the millisecond...
Light scattering from rough surfaces is an area of research that has received a great deal of interest from several engineering disciplines. Analytical models for reflectivity have been useful in the study of medical imaging, atomic physics, remote sensing and rapid thermal processing (RTP) of silicon semiconductor wafers. This paper presents a new variation of the surface generation method (SGM)...
Process capability, quality (including uniformity and short-and long-term repeatability), and throughput had been the main focus for the semiconductor tool manufacturers in the past. While these are still in most cases non-negotiable requirements, the chip manufacturers are increasingly paying attention to other tool features as well. Examples include wafer manufacturing process cycle time, tool and...
Applied materials played a pivotal role in the commercial acceptance of rapid thermal processing (RTP) within the semiconductor industry, largely by solving the problem of precisely measuring and controlling the temperature of silicon. Today, our RTP-based products are used for processes as varied as radical oxidation, gate oxide engineering, metal silicide annealing, and ultra shallow junction annealing...
In the present paper it will be shown that RTP combined with laser irradiation parallel to the wafer surface yields an optimum control of chemical reactions. The technique will be discussed and results regarding the surface preparation of silicon wafers as well as the deposition of atomically controlled layers for nanoelectronics will be presented. Examples are the removal of carbon containing residuals...
Semiconductors have been successfully produced by the miniaturization of planar transistors and their transformation into a 3D structure. This innovation will realize ideal performance in electric devices. In this article, plasma doping combined with several state-of-the-art rapid thermal processing is shown to be a technology for enabling the fabrication of miniaturized 2D devices and advanced 3D...
Carbon and fluorine co-implantation have shown encouraging junction formation improvement, especially for P-type junctions. Nevertheless, no obvious improvement is found for arsenic implants. In this paper, phosphorous with different co-implants shows that C co-implant can effectively suppress phosphorous diffusion. With C co-implant, the junction depth decreased 42% at low temperature RTP combined...
The Applied Materials RTP systems are unique in providing high resolution process data particularly lamp power and temperature as a function of radial position and time. This work explores how these data can be exploited to predict on-wafer process results using an SPC analysis package named WISR. WISR is an advanced process control platform for collection, storage, visualization, and analysis of...
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