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The interaction between sub-melt laser annealing and an embedded Si1-xGex source/drain (S/D) module has been studied in more detail by means of a PFET transistor evaluation and blanket layer characterization. If the integration of the Si1-xGex source/drain and laser anneal modules is not optimized, defects are introduced into the Si substrate as a result of the additional thermal stress. The presence...
Sub-melt millisecond annealing technologies have been widely accepted for current and future IC fabrication. Real-time temperature control, both within wafer and from wafer-to-wafer, is one of the key challenges that must be addressed for the successful introduction of any millisecond annealing technology into a production environment. In this paper, we show results from a novel pyrometry approach...
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