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The discrete IGBT (Insulated Gate Bipolar Transistor) is the most important power semiconductor device for power conversion and control in the medium power range with voltages >400 V. Next generation IGBTs require low thermal budget p-n junction formation for the back side field stop and emitter layer. The requirement for the limited thermal budget is due to the fact that the front side metallization...
Minimization of dopant diffusion during electrical activation is a crucial issue in developing sub-50 nm silicon technology. Excimer laser annealing (ELA) in the melting regime is capable of meeting the requirements on shallow junctions in terms of depth, doping concentration and abruptness. However, in order to be successfully employed it has to be demonstrated that ELA can be integrated in a device...
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