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To increase the amount of logic available in SRAM-based FPGAs manufacturers are using nanometric technologies to boost logic density and reduce prices. However, nanometric scales are highly vulnerable to radiation-induced faults that affect values stored in memory cells. Since the functional definition of FPGAs relies on memory cells, they become highly prone to this type of faults. Fault tolerant...
The inter-die and intra-die variations in process parameters (in particular, threshold voltage (Vt)) can lead to large number of failures in an SRAM array, thereby, degrading the design yield in nanometer technologies. To improve parametric yield of nano-scaled memories, different circuit and architectural level techniques can be used. In this paper, we first analyze and model different SRAM failures...
In this paper we study complex read faults in SRAMs, a combination of various malfunctions that affect the read operation in nanoscale memories. All the memory elements involved in the read operation are studied, underlining the causes of the realistic faults concerning this operation. The requirements to cover these fault models are given. We show that the different causes of read failure are independent...
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