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This paper addresses some relevant issues and recent developments concerning the analysis and simulation of electrothermal effects in bipolar devices and circuits
RF and other high-frequency bipolar circuits operating at 1-5 GHz have been ESD protected using the human body model test to 2kV. The described design and modeling techniques minimize the operating parasitics, chip area, and number of process turn-arounds
We present the first investigation of the optimal implementation of SiGe BiCMOS precision voltage references for extreme temperature range applications (+120 degC to -180 degC and below). We have developed and fabricated two unique Ge profiles optimized specifically for cryogenic operation, and for the first time compare the impact of Ge profile shape on precision voltage reference performance down...
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