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We adapt the Mextram 504 compact model for Si and SiGe bipolar transistors to make it suitable for compact modeling of GaAs HBT's. We discuss the different physics included in the new model, Mextram 3500, and demonstrate the capabilities of the new model on GaAs HBT characteristic simulations. We also show an example of advanced GaAs PA-circuit simulations that have been performed with our model
We measured the large-signal performance of GaAs HBT and Si BJT for 1-tone, EDGE, and OFDM excitation. We optimized loading and biasing for linear efficiency. For EDGE GaAs HBT shows a slightly higher linear efficiency than Si BJT. For OFDM both technologies reach comparable performance. This makes silicon a good alternative for linear power amplifiers in mobile communication systems
RF and other high-frequency bipolar circuits operating at 1-5 GHz have been ESD protected using the human body model test to 2kV. The described design and modeling techniques minimize the operating parasitics, chip area, and number of process turn-arounds
The paper presents a highly miniaturized front end module (FEM) for GSM. The module consists of pure silicon BiCMOS RF power amplifier (PA) chip, a BiCMOS die for bias/control functions and a pHEMT switch die, all flipped on a passive integration die, which is mounted on an organic laminate substrate. All passives are integrated. Partitioning of passives is optimized to achieve minimum size (6times6times1...
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